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담당자 :
Wang Hong
Low Dissipation High Voltage Doorknob Capacitor with High Withstanding Voltage and Insulation Resistance for RF Power Supply

무료샘플과 쿠폰을 위해 나와 연락하세요.
왓츠앱:0086 18588475571
위챗: 0086 18588475571
스카이프: sales10@aixton.com
만약 당신이 어떠한 관심도 가지면, 우리가 24 시간 온라인 도움말을 제공합니다.
x제품 상세 정보
강조하다 | Low Dissipation High Voltage Doorknob Capacitor,High Withstanding Voltage RF Power Supply Capacitor,High Insulation Resistance HV Doorknob Capacitor |
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제품 설명
High Voltage Doorknob Capacitors for RF Power Supply
Technical Specifications
No. | Specification | Dissipation | Withstanding Voltage | Insulation Resistance | Dimensions (mm) |
---|---|---|---|---|---|
1 | 20kV-2000pF | ≤0.0040 | 1.5Ur● 1min | ≥1.0 x 105MΩ | D:45 | H:19 | L:23 | D:12 | M:5 |
2 | 20kV-10000pF | ≤0.0040 | 1.5Ur● 1min | ≥1.0 x 105MΩ | D:65 | H:15 | L:19 | D:12 | M:5 |
3 | 20kV-18000pF | ≤0.0040 | 1.5Ur● 1min | ≥1.0 x 105MΩ | D:80 | H:17 | L:25 | D:12 | M:5 |
4 | 30kV-1000pF | ≤0.0040 | 1.5Ur● 1min | ≥1.0 x 105MΩ | D:45 | H:24 | L:32 | D:12 | M:4 |
5 | 30kV-2700pF | ≤0.0040 | 1.5Ur● 1min | ≥1.0 x 105MΩ | D:60 | H:20 | L:28 | D:12 | M:4 |
6 | 30kV-12000pF | ≤0.0040 | 1.5Ur● 1min | ≥1.0 x 105MΩ | D:45 | H:19 | L:23 | D:12 | M:5 |
7 | 40kV-150pF | ≤0.0040 | 1.5Ur● 1min | ≥1.0 x 105MΩ | D:74 | H:18 | L:26 | D:12 | M:5 |
8 | 40kV-500pF | ≤0.0040 | 1.5Ur● 1min | ≥1.0 x 105MΩ | D:28 | H:33 | L:41 | D:8 | M:4 |
9 | 40kV-7500pF | ≤0.0040 | 1.5Ur● 1min | ≥1.0 x 105MΩ | D:80 | H:24 | L:29 | D:12 | M:6 |
10 | 40kV-10000pF | ≤0.0040 | 1.5Ur● 1min | ≥1.0 x 105MΩ | D:80 | H:22 | L:26 | D:16 | M:5 |
Application in PECVD Equipment
Our high-voltage doorknob capacitors provide stable high voltage for Plasma-Enhanced Chemical Vapor Deposition (PECVD) equipment, essential for semiconductor, photovoltaic, and optical coating industries. These capacitors enable low-temperature deposition of high-quality thin films by maintaining stable, uniform plasma through efficient RF power supply performance.
Technical Challenges Addressed
- Impedance Matching: Efficient power coupling to dynamically changing plasma loads
- High RF Power Handling: Withstands electrical stresses from high frequency and voltage
- Thermal Management: Minimizes heat accumulation from dielectric and electrode losses
- Long-term Stability: Prevents capacitance drift that affects deposition rate and film quality
Solution: High-Q, Low-ESR Doorknob Capacitors
- Efficient Power Transfer: Low ESR minimizes heat generation with high RF currents
- Thermal Stability: Temperature-compensated ceramic dielectric maintains stable capacitance
- High Reliability: Rugged construction ensures long service life in demanding RF conditions
Customer Benefits
- Improved film quality and consistency through stable impedance matching
- Increased productivity and yield with reduced process interruptions
- Lower operating costs from reduced energy consumption and maintenance
Our high-voltage doorknob capacitors serve as the "impedance harmonizer" for PECVD equipment, enabling precise atomic-level deposition for superior thin film production.
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