• XIAN XIWUER ELECTRONIC AND INFO. CO., LTD
    리차드
    "XIWUER는 매우 혁신적입니다. 우리가 필요로 할지도 모르는 것에 관해 미래를 앞으로 조사하면서, 그들은 우수한, 직관적 서비스를 제공했습니다."
  • XIAN XIWUER ELECTRONIC AND INFO. CO., LTD
    마이크
    "우리의 엄중한 처리 조건을 충족시키기 위해 다른 사양을 설계하는 것에게 XIWUER의 헌납은 우리의 수년간의 연구 개발을 표명합니다 "
  • XIAN XIWUER ELECTRONIC AND INFO. CO., LTD
    결혼하세요
    "XIWUER는 인상적 연구 능력을 가지고, 좋은 원형 역량과 고품질 품질을 증명합니다 "
담당자 : Wang Hong

How a new generation of high-voltage doorknob capacitors is pushing the boundaries of NMR technology

원래 장소 서안, 중국
브랜드 이름 XIWUER
인증 ISO9001,ISO14001,ISO45001
문서 High Voltage Ceramic Capaci...25.pdf
최소 주문 수량 1pcs
가격 협상 가능
포장 세부 사항 판지 상자
배달 시간 5-7 일
지불 조건 l/c, t/t
공급 능력 일년에 4,000,000 PC

무료샘플과 쿠폰을 위해 나와 연락하세요.

왓츠앱:0086 18588475571

위챗: 0086 18588475571

스카이프: sales10@aixton.com

만약 당신이 어떠한 관심도 가지면, 우리가 24 시간 온라인 도움말을 제공합니다.

x
제품 상세 정보
산재 ≦0.0040 내 전압 1.5UR ● 1 분
절연 저항 1.0 × 105mΩ
강조하다

high voltage doorknob capacitors NMR

,

doorknob capacitors high voltage technology

,

NMR high voltage capacitors

필요한 제품을 선택하고 게시판에서 당사와 소통 할 수 있습니다.
메시지를 남겨주세요
제품 설명

A Revolution in Dielectric Materials: From Stability to Functionality

Traditional capacitor dielectric materials often struggle to balance temperature stability and voltage coefficient. Our specialized barium strontium titanate-based composite ceramic dielectrics, developed through precise rare earth element doping and microstructural manipulation, achieve three breakthrough properties:

Near-zero voltage coefficient: Within the rated operating voltage range, the capacitance variation is controlled to within ±0.1%, ensuring accurate RF pulses at various power levels.

Wide Temperature Stability: Capacitance drift is less than ±0.5% from -55°C to +125°C, meeting the requirements of a full range of probe applications, from ambient to cryogenic temperatures.

Adaptive Dielectric Properties: In strong external magnetic fields, the dielectric material's magnetic susceptibility remains below 10⁻⁸, completely eliminating interference with the main magnetic field uniformity.

Drawing:
How a new generation of high-voltage doorknob capacitors is pushing the boundaries of NMR technology 0

Parameters:

No. Specification Dissipation Withstanding voltage Insulation resistance Dimension(mm)
1 20kV-2000pF








≦0.0040








1.5Ur 1min








≧1.0×105MΩ

D H L D M
2 20kV-10000pF 45 19 23 12 5
3 20kV-18000pF 65 15 19 12 5
4 30kV-1000pF 80 17 25 12 5
5 30kV-2700pF 45 24 32 12 4
6 30kV-12000pF 60 20 28 12 4
7 40kV-150pF 20 33 41 8 4
8 40kV-500pF 28 33 41 8 4
9 40kV-7500pF 80 24 29 12 6
10 40kV-10000pF 80 22 26 16 5
11 50kV-1000pF 50 30 34 12 4
12 50kV-1000pF 32 27 31 16 5
13 50kV-5600pF 80 31 35 16 5
14 60kV-1500pF 50 31 34 12 5
15 60kV-3000pF 65 32 35 16 5
16 100kV-500pF 50 54 58 12 5
17 100kV-2000pF 51 32 35 16 5
18 Insulator type 100kV-1500pF 68 36 40 16 5
19 150kV-820pF 65 95 100 12 5
20 200kV-600pF 50 90 94 16 5


A Revolution in Dielectric Materials: From Stability to Functionality

Traditional capacitor dielectric materials often struggle to balance temperature stability and voltage coefficient. Our specialized barium strontium titanate-based composite ceramic dielectrics, developed through precise rare earth element doping and microstructural manipulation, achieve three breakthrough properties:

Near-zero voltage coefficient: Within the rated operating voltage range, the capacitance variation is controlled to within ±0.1%, ensuring accurate RF pulses at various power levels.

Wide Temperature Stability: Capacitance drift is less than ±0.5% from -55°C to +125°C, meeting the requirements of a full range of probe applications, from ambient to cryogenic temperatures.

Adaptive Dielectric Properties: In strong external magnetic fields, the dielectric material's magnetic susceptibility remains below 10⁻⁸, completely eliminating interference with the main magnetic field uniformity.

The Engineering Value of Structural Innovation

The extremely compact interior of an MRI scanner poses significant challenges to component layout. Our 3D stacked doorknob capacitor addresses several pain points in traditional designs through its innovative internal connection architecture:

40% improvement in space utilization: Optimized electric field distribution enables higher energy density within the same volume.

Integrated thermal management: Direct thermal connection between the built-in micro heat pipe and the housing reduces thermal resistance by 30%, ensuring temperature stability under sustained high-power pulses.

Modular interconnect design: The patented snap-on connection system enables rapid assembly and maintenance, significantly reducing system integration complexity.